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| 1SS404 TOSHIBA Diode Silicon Epitaxial Shottlky Barrire Type 1SS404 High Voltage Switching Applications * * * * Tow-pin small packages are suitable for higher mounting densities Excellent in Forward Current and Forward Voltage Characteristics : VF (3) = 0.8 V (typ.) Fast Reverse Recovery Time: IR = 50 A (max) Small Total Capacitance: CT = 46 pF (typ.) Maximum Ratings (Ta = 25C) Characteristics Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Power dissipation Junction temprature Storage temperature range Symbol VRM VR IFM IO P Tj Tstg Rating 25 20 700 300 200 (Note) 125 -55 to 125 C C Unit V V mA mA mW Note: When mounted on a glass epoxy board PCB: 20 mm x 20 mm, with copper pad 4 mm x 4 mm. Marking Equivalent Circuit (top view) S5 961001EAA1 * TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 2000-04-12 1/3 1SS404 Electrical Characteristics (Ta = 25C) Characteristics Symbol VF (1) Forward voltage VF (2) VF (3) Reverse current Total capacitance IR CT IF = 1 mA IF = 10 mA IF = 300 mA VR = 20 V VR = 0, f = 1 MHz Test Condition Min Typ. 0.16 0.22 0.38 46 Max 0.45 50 A pF V Unit 2000-04-12 2/3 1SS404 IF - VF 10 m Ta = 100C 75C 50C 25C IR - VR Ta = 100C 75C 100 50C 25C 0C 1 -25C 100 n 100 m 1m (A) Forward current IF 10 m 0C 1m -25C Reverse current IR (A) 10 10 n 0 100 10 0 0.1 0.2 0.3 0.4 0.5 4 8 12 16 20 24 Forward voltage VF (V) Reverse voltage VR (V) CT - VR 1000 f = 1 MHz Ta = 25C 300 140 120 P - Ta Power Dissipation P (mW) (pF) 100 Total capacitance CT 100 80 60 40 30 10 3 20 0 0 1 0.01 0.03 0.1 0.3 1 3 10 30 100 25 50 75 100 125 150 Reverse voltage VR (V) Ambient temperature Ta (C) 2000-04-12 3/3 |
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